Selection of semiconductor gas flow controllers based on the principle of thermal diffusion coefficient
Release time：
21 Mar,2023
Summary
The semiconductor gas flow controller uses the principle of thermal diffusion coefficient. Thermal diffusion coefficient theory is a professional technology with excellent performance and high reliability in harsh environments. Semiconductor gas flow controllers have two temperature sensors placed in the medium. One sensor is heated to a temperature above the ambient temperature, and the other temperature sensor is used to measure the temperature of the magnetic induction material. The flow meter/control board is mainly composed of a surface layer, an electric heater, a proportional valve, and a temperature sensor. According to the heating method and the accurate measurement method, the flow meter is divided into capillary/thermal separation flow meter, insertion flow meter, and microelectronic flow meter.
The flow precision of the micro flow controller can reach ±1.0% of the full scale, and the flow monitoring range is 2~100% of the full scale (the range ratio is --50:1), so it is widely used in many industries. The main characteristics of measuring and controlling the flow rate are that the flow rate is not affected by temperature and pressure, so the product can start normally whether it is under positive pressure or absolute pressure. If the user wants to use the thermal gas quality flow controller in an absolute pressure environment, it needs to be specified to the salesperson when ordering, and the product will be calibrated according to the customer's specific needs when it leaves the factory.
Digital Display Flow Controller
The thermal gas quality flow controller frequently used in vacuum coating equipment is mainly used to control the airflow of gas and accurately input the gas flow into the vacuum chamber. The AC-S030C series gas quality flow controller is mainly used to control the micro flow of gas, using a new manufacturing process, calibrated at 20℃ and 1 atmospheric pressure, mainly referring to the volume flow rate of gas in 1 minute.
The semiconductor gas flow controller sensor includes two sensor components, a speed sensor and a temperature sensor. They automatically compensate and calibrate gas temperature changes. The electric heater part of the instrument heats the speed sensor to a time constant above the operating temperature, forming a stable temperature difference between the speed sensor and the sensor measuring the operating temperature. When the temperature difference remains unchanged, the energy consumed by the electric heater, which can be said to be the heat dissipation value, is positively correlated with the mass flow rate through the gas.
Evaporation coating generally heats the sputtering target material so that the surface components are volatilized in the form of atomic groups or positive ions. And the foundation settles on the silicon wafer surface, generating a plastic film through the coating process (scattering-island structure-meandering structure-layer growth). For magnetron sputtering type crystallization, it can be interpreted as using electronic devices or high-energy laser transition sputtering target materials, so that the surface components are magnetron sputtered in the form of atomic groups or positive ions, and then attached to the silicon wafer surface, personally experiencing the coating process, thus forming a plastic film.
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