PECVD working principle
Release time：
09 Oct,2024
Summary
PECVD is a process that deposits thin films by chemical reactions through plasma. In a PECVD system, reactant gases are first introduced into the reaction chamber, and then plasma is generated through heating or auxiliary energy. The free radicals and ions in the plasma deposit on the substrate surface through chemical reactions to form a thin film.
The working principle of PECVD can be divided into two key steps: gas dissociation and deposition. In the plasma, high-energy electrons collide with gas molecules and dissociate them, generating free radicals and ions. These free radicals and ions undergo surface diffusion and adsorption, and finally deposit on the substrate surface to form a thin film.
PECVD has a high deposition rate and excellent film uniformity, and is widely used in semiconductors, display devices, solar cells, and other fields. By controlling the types and proportions of reactant gases, thin films with different properties can be synthesized, such as silicon nitride, oxides, and carbon nitride. In addition, PECVD can also be used for preparation at lower temperatures, which is suitable for materials sensitive to substrate temperature.
In general, PECVD, as a controllable and highly efficient deposition process, has broad application prospects in the field of material preparation.
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