Application of PECVD technology in thin film coating
Release time：
10 Oct,2024
Summary
PECVD is a method for depositing thin films on a substrate surface by utilizing plasma to activate reactive gases under atmospheric pressure or low vacuum. In the PECVD process, the active species generated by the plasma effectively decompose the precursor gases and promote the gas-phase deposition reaction, resulting in a dense and uniform film structure. This technology can not only deposit two-dimensional thin films but also be used for the growth of nanostructures, widely applied in research to improve material surface properties and processing technologies.
In the semiconductor industry, PECVD is often used to deposit functional thin films such as silicon oxide and silicon nitride films, used to prepare insulating layers and lithographic layers. In the photovoltaic field, PECVD is widely used in the production of amorphous silicon and microcrystalline silicon thin-film solar cells. In addition, PECVD plays an important role in the preparation of electronic display devices, such as depositing silicon nitride films for the preparation of TFT LCD panels.
In general, PECVD technology has broad application prospects in the field of thin film coating. With the continuous emergence of new materials and the continuous improvement of processes, PECVD technology will continue to provide important support for research and industrial development in various fields.
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