Introduction to the working principle of ALD
Release time：
01 Oct,2024
Summary
ALD is a layer-by-layer deposition process that precisely controls the number of atomic layers in each deposited film by alternately introducing two gaseous precursors to the substrate surface. The working principle of ALD is based on the adsorption and reaction of gas-phase precursor molecules on the surface, forming an atomically precise atomic layer coverage. First, the substrate surface provides certain active sites, and then the first precursor gas is introduced, and the reaction products react with the substrate surface to form an atomic layer film. Then, the excess precursor gas is purged from the reaction chamber. Next, the second precursor gas is introduced into the reaction chamber, reacting with the first layer of film to form another atomic layer, and the excess gas is purged. This cycle is repeated until the desired film thickness is reached.
The working principle of ALD ensures atomic layer control and uniformity of film deposition, making it widely used in semiconductors, optoelectronic devices, and other fields. By carefully designing reaction conditions and selecting precursor gases, various films can be deposited, such as zinc oxide and silicon dioxide. The development of ALD technology has brought new possibilities to the field of micro-nano processing and is one of the important methods for preparing nano-scale devices.
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